Para Light Unveils ThermaFlat™ SiC MOSFETs to Break High-Power Thermal Barriers
#ParaLight #Semiconductors #PowerElectronics #SiCMOSFET #ThermaFlat #EVCharging #AIDataCenters #CleanEnergy Tech #TechInnovation #EngineeringExcellence
August 2026 : Para Light Electronics has officially launched its new ThermaFlat™ SiC MOSFET series, taking direct aim at one of the most stubborn bottlenecks in modern power system design: thermal drift. Built with proprietary Ultra-Low RDS(on) Drift Technology, the new ThermaFlat™ I and ThermaFlat™ II families are built to keep systems cooler, vastly reduce conduction losses, and boost efficiency across fast-growing electrification sectors.
As demand surges across AI data centers, electric vehicle (EV) charging networks, renewable energy storage, and industrial automation, power systems are under pressure to pack more energy into smaller, highly efficient footprints. Traditional silicon and standard SiC MOSFETs often hit a wall as operating temperatures rise - escalating on-resistance triggers a vicious cycle of extra heat, lost efficiency, and bulky cooling setups.
ThermaFlat™ shifts this paradigm by maintaining virtually flat on-resistance across broad temperature spans while preserving low switching losses. Benchmark tests on Para Light’s 650 V, 21mΩ TO-247 device revealed an RDS(on) change of roughly 8% across a temperature sweep from -25°C to +125°C. This level of thermal stability lets engineers shrink thermal management requirements, drop overall system costs, and sustain high efficiency even under heavy workloads.
To accommodate different system setups, the lineup features two distinct branches:
Backed by decades of manufacturing heritage and a global presence spanning Taiwan, China, the U.S., India, and Myanmar, Para Light leverages vertical integration to guarantee yield consistency, uninterrupted supply chains, and lower total ownership costs for global power original equipment manufacturers (OEMs).
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